STUDY OF CHARACTERISTIC PARAMETERS FOR CHANNEL AND GATE ENGINEERED DOUBLE GATE MOSFET CONSIDERING GAUSSIAN DOPING AND INNER FRINGING CAPACITANCE

Manoj Kumar

Advances in Industrial Engineering and Management（AIEM）

Print ISSN: 2222-7059

Online ISSN: 2222-7067

STUDY OF CHARACTERISTIC PARAMETERS FOR CHANNEL AND GATE ENGINEERED DOUBLE GATE MOSFET CONSIDERING GAUSSIAN DOPING AND INNER FRINGING CAPACITANCE

Manoj Kumar

This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Author(s):Akashdeep Mazumder, Saim Aktar, Anamika Kumari, Aaswas Ganguly, Swapnadip De

Keywords

Gaussian Doping; Inner Fringing Capacitance; Channel Engineering; gate Engineering; Double Gate MOSFET