ANALYTICAL MODEL OF SURFACE POTENTIAL OF DOUBLE SURROUNDING GATE MOSFET

Abhishek Chakraborty, Sourav Bairagya, Angsuman Sarkar

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Abstract

This paper presents an analytical model of surface potential of double surrounding gate MOSFET. The model has been developed using a flux-based approach. The variation of surface potentials for change in different device parameters has been provided.

Keywords

Double surrounding gate MOSFET; surface potential; analytical model; flux-based approach; short-channel effects.